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| (R) STGP3NB60HD STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESHTM IGBT TYPE STGP3NB60HD STGP3NB60HDFP s V CES 600 V 600 V V CE(sat) < 2.8 V < 2.8 V IC 3A 3A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T emperature 600 20 6 3 24 70 0.56 -65 to 150 150 Value STG P7NB60HD STGP7NB60HDF P 600 20 6 3 24 35 0.28 V V A A A W W /o C o o Unit C C (*) Pulse width limited by max. junction temperature June 1999 1/9 STGP3NB60HD/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.78 62.5 0.5 T O-220FP 3.57 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 100 1000 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 A IC = 3 A IC = 3 A Min. 3 2.4 1.9 Typ. Max. 5 2.8 Unit V V V Tj = 125 o C DYNAMIC Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions IC = 3 A f = 1 MHz V GE = 0 Min. 1.3 160 23 4.5 Typ. 2.4 235 33 6.6 21 6 7.6 12 300 43 8.6 27 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 3 A V GE = 15 V V clamp = 480 V T j = 150 o C R G =10 SWITCHING ON Symbol t d(on) tr (di/dt) on Eo n (r) Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C IC = 3 A R G = 10 IC = 3 A V GE = 15 V Min. Typ. 16 30 400 77 Max. Unit ns ns A/s J 2/9 STGP3NB60HD/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) Parameter Test Conditions IC = 3 A V GE = 15 V Min. Typ. 90 36 53 70 33 100 180 82 58 110 88 165 Max. Unit ns ns ns ns J J ns ns ns ns J J Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 3 A If = 3 A dI/dt = 100 A/S T j = 125 o C V R =200 V o T j = 125 C 1.6 1.4 87 160 3.7 T est Conditions Min. T yp. Max. 3 24 2.0 Unit A A V V ns nC A (*) Pulse width limited by max. junction temperature (r) Include recovery lossess on the STTA306 freewheeling diode () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedeance For TO-220 Thermal Impedeance For TO-220FP 3/9 STGP3NB60HD/FP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/9 STGP3NB60HD/FP Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/9 STGP3NB60HD/FP Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/9 STGP3NB60HD/FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 7/9 STGP3NB60HD/FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 8/9 G STGP3NB60HD/FP Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 9/9 |
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